2SK2796S Specs and Replacement
Type Designator: 2SK2796S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: DPAK
2SK2796S substitution
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2SK2796S datasheet
rej03g1034 2sk2796lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2796.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
2sk2796l.pdf
isc N-Channel MOSFET Transistor 2SK2796L FEATURES Drain Current I = 16.9A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION DC/DC Converters DC/AC Inverters Motor Drives ABSOLUTE MA... See More ⇒
Detailed specifications: 2SK2408, 2SK2553L, 2SK2553S, 2SK2684L, 2SK2684S, 2SK2735L, 2SK2735S, 2SK2796L, SKD502T, 2SK2869L, 2SK2869S, 2SK2912L, 2SK2912S, 2SK2925L, 2SK2925S, 2SK2926L, 2SK2926S
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