All MOSFET. 2SK2912S Datasheet

 

2SK2912S MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2912S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: LDPAK

 2SK2912S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2912S Datasheet (PDF)

 ..1. Size:355K  inchange semiconductor
 2sk2912s.pdf

2SK2912S 2SK2912S

isc N-Channel MOSFET Transistor 2SK2912SFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

 7.1. Size:95K  renesas
 2sk2912.pdf

2SK2912S 2SK2912S

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous: ADE-208-495A) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L

 7.2. Size:109K  renesas
 rej03g1038 2sk2912lsds.pdf

2SK2912S 2SK2912S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 2sk2912l.pdf

2SK2912S 2SK2912S

isc N-Channel MOSFET Transistor 2SK2912LFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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