All MOSFET. 2SK3135L Datasheet

 

2SK3135L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3135L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 75 A

Total Gate Charge (Qg): 125 nC

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: LDPAK

2SK3135L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3135L Datasheet (PDF)

0.1. rej03g1067 2sk3135lsds.pdf Size:108K _renesas

2SK3135L
2SK3135L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. 2sk3135.pdf Size:94K _renesas

2SK3135L
2SK3135L

2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous: ADE-208-695B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L

 8.1. 2sk3130.pdf Size:193K _toshiba

2SK3135L
2SK3135L

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS =

8.2. 2sk3132.pdf Size:418K _toshiba

2SK3135L
2SK3135L

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3132 Chopper Regulator DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.07 Ω (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.4 to 3.4 V (VDS

 8.3. 2sk3131.pdf Size:713K _toshiba

2SK3135L
2SK3135L

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Unit: mm Applications Fast reverse recovery time : trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance : RDS (ON) = 0.085 Ω (typ.) High forward transfer admittance : |Yfs| = 35 S (typ.) Low l

8.4. 2sk3136.pdf Size:87K _renesas

2SK3135L
2SK3135L

2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 (Previous: ADE-208-696B) Rev.4.00 Sep 20, 2005 Features • Low on-resistance RDS(on) =4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

 8.5. rej03g1068 2sk3136ds.pdf Size:101K _renesas

2SK3135L
2SK3135L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. 2sk3134.pdf Size:94K _renesas

2SK3135L
2SK3135L

2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous: ADE-208-721B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L

8.7. rej03g1066 2sk3134lsds.pdf Size:108K _renesas

2SK3135L
2SK3135L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. 2sk3133.pdf Size:25K _hitachi

2SK3135L
2SK3135L

 2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance RDS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Ab

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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