2SK3736 Specs and Replacement
Type Designator: 2SK3736
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220AB
2SK3736 substitution
- MOSFET ⓘ Cross-Reference Search
2SK3736 datasheet
2sk3736.pdf
2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain ... See More ⇒
2sk3736.pdf
isc N-Channel MOSFET Transistor 2SK3736 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @ V = 4V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
rej03g0525 2sk3736ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk373.pdf
2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit mm Applications High breakdown voltage VGDS = -100 V (min) High input impedance I = -1.0 nA (max) (V = -80 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -100 V Gate... See More ⇒
Detailed specifications: 2SK3211L, 2SK3211S, 2SK3274L, 2SK3274S, 2SK3418, 2SK3419, 2SK3446, 2SK3447, 7N60, 2SK4093, 2SK4150, 2SK4151, H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS
Keywords - 2SK3736 MOSFET specs
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