2SK3736 Specs and Replacement

Type Designator: 2SK3736

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220AB

2SK3736 substitution

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2SK3736 datasheet

 ..1. Size:85K  renesas
2sk3736.pdf pdf_icon

2SK3736

2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain ... See More ⇒

 ..2. Size:289K  inchange semiconductor
2sk3736.pdf pdf_icon

2SK3736

isc N-Channel MOSFET Transistor 2SK3736 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @ V = 4V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 0.1. Size:98K  renesas
rej03g0525 2sk3736ds.pdf pdf_icon

2SK3736

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:313K  toshiba
2sk373.pdf pdf_icon

2SK3736

2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit mm Applications High breakdown voltage VGDS = -100 V (min) High input impedance I = -1.0 nA (max) (V = -80 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -100 V Gate... See More ⇒

Detailed specifications: 2SK3211L, 2SK3211S, 2SK3274L, 2SK3274S, 2SK3418, 2SK3419, 2SK3446, 2SK3447, 7N60, 2SK4093, 2SK4150, 2SK4151, H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS

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