2SK4151 Specs and Replacement
Type Designator: 2SK4151
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 31 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
Package: TO92
2SK4151 substitution
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2SK4151 datasheet
rej03g1901 2sk4151ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1909 2sk4150ds.pdf
Preliminary Datasheet 2SK4150 REJ03G1909-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 27, 2010 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25 C) Outline RENESAS Package code PRSS0003DA-A (Package name TO-92(1)) D 1. Source 2. Drain G 3. Gate ... See More ⇒
2sk415.pdf
isc N-Channel MOSFET Transistor 2SK415 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage,high speed power Switching . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE ... See More ⇒
Detailed specifications: 2SK3274S, 2SK3418, 2SK3419, 2SK3446, 2SK3447, 2SK3736, 2SK4093, 2SK4150, IRF830, H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, H5N2008P
Keywords - 2SK4151 MOSFET specs
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