All MOSFET. H5N2305P Datasheet

 

H5N2305P Datasheet and Replacement


   Type Designator: H5N2305P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 230 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO3P
 

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H5N2305P Datasheet (PDF)

 0.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2305P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2305P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: H5N1506P , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , H5N2008P , H5N2301PF , AO3407 , H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL .

History: DMN5L06DWK | F10W90HVX2 | RQ3E100BN | IRF3704PBF | AP3700YT | 2SJ171 | FIR16N50FG

Keywords - H5N2305P MOSFET datasheet

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