H5N2305PF MOSFET. Datasheet pdf. Equivalent
Type Designator: H5N2305PF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 230 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 105 nC
Rise Time (tr): 130 nS
Drain-Source Capacitance (Cd): 690 pF
Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
Package: TO3PFM
H5N2305PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H5N2305PF Datasheet (PDF)
0.1. rej03g0026 h5n2305pf.pdf 
Size:104K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. rej03g0031 h5n2306pf.pdf Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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