H5N2306PF Datasheet. Specs and Replacement

Type Designator: H5N2306PF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 230 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO3PFM

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H5N2306PF datasheet

 ..1. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2306PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2306PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, H5N2008P, H5N2301PF, H5N2305P, H5N2305PF, AON6426, H5N2504DL, H5N2504DS, H5N2505DL, H5N2505DS, H5N2507P, H5N2508DL, H5N2508DS, H5N2509P

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs