All MOSFET. H5N2306PF Datasheet

 

H5N2306PF Datasheet and Replacement


   Type Designator: H5N2306PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 230 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO3PFM
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H5N2306PF Datasheet (PDF)

 ..1. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2306PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2306PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: G2309 | ELM58822SA | BLF3G21-6 | IXFH23N80Q | AOI4286 | H5N1503P | HGD120N10AL

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