H5N2509P Specs and Replacement
Type Designator: H5N2509P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: TO3P
H5N2509P substitution
- MOSFET ⓘ Cross-Reference Search
H5N2509P datasheet
rej03g1109 h5n2509pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1107 h5n2505dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1108 h5n2508dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0399ej h5n2504dl.pdf
Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package ... See More ⇒
Detailed specifications: H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL , H5N2508DS , IRF540N , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , H5N2519P , H5N2522LS , H5N2801P .
Keywords - H5N2509P MOSFET specs
H5N2509P cross reference
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H5N2509P substitution
H5N2509P replacement
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