H5N2802PF Datasheet and Replacement
Type Designator: H5N2802PF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO3PFM
H5N2802PF substitution
H5N2802PF Datasheet (PDF)
rej03g1298 h5n2802pf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0395 h5n2803pf.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0118 h5n2801p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , H5N2519P , H5N2522LS , H5N2801P , IRF630 , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD , H5N3005LS , H5N3008P , H5N3011P , H5N5001FM .
History: H5N2803PF
Keywords - H5N2802PF MOSFET datasheet
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History: H5N2803PF
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