H5N5015P Specs and Replacement

Type Designator: H5N5015P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO3P

H5N5015P substitution

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H5N5015P datasheet

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H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:153K  renesas
 rej03g0175 h5n5016pl.pdf pdf_icon

H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:146K  renesas
 h5n5016pl-e0-e.pdf pdf_icon

H5N5015P

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100 500V - 50A - MOS FET Rev.1.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003ZC-A (Package name TO-264) D 1.... See More ⇒

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Detailed specifications: H5N3011P, H5N5001FM, H5N5006DL, H5N5006DS, H5N5006FM, H5N5006LS, H5N5007P, H5N5012P, AON7408, H5N5016PL, H5N6001P, H7N0203AB, H7N0307AB, H7N0307LD, H7N0307LM, H7N0307LS, H7N0308AB

Keywords - H5N5015P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs