All MOSFET. H5N5015P Datasheet

 

H5N5015P MOSFET. Datasheet pdf. Equivalent


   Type Designator: H5N5015P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 175 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 32 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 170 nC
   Rise Time (tr): 125 nS
   Drain-Source Capacitance (Cd): 475 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
   Package: TO3P

 H5N5015P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N5015P Datasheet (PDF)

 0.1. Size:99K  renesas
rej03g1117 h5n5015pds.pdf

H5N5015P
H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:69K  renesas
rej03g0378 h5n5012p.pdf

H5N5015P
H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:153K  renesas
rej03g0175 h5n5016pl.pdf

H5N5015P
H5N5015P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:146K  renesas
h5n5016pl-e0-e.pdf

H5N5015P
H5N5015P

Preliminary Datasheet H5N5016PL-E0-E R07DS1200EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.108 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003ZC-A(Package name:TO-264)D1.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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