H7N0308LD Specs and Replacement
Type Designator: H7N0308LD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 370 nS
Cossⓘ - Output Capacitance: 840 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: LDPAK
H7N0308LD substitution
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H7N0308LD datasheet
rej03g1124 h7n0308ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1122 h7n0308abds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
h7n0308cf.pdf
H7N0308CF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004 at VGS = 10 V 98 30 82 nC 0.005 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220 FULLPAK D Server DC/DC G S S D G N-Channel MOSFET Top Vi... See More ⇒
Detailed specifications: H5N5016PL , H5N6001P , H7N0203AB , H7N0307AB , H7N0307LD , H7N0307LM , H7N0307LS , H7N0308AB , IRFP260 , H7N0308LM , H7N0308LS , H7N0310LD , H7N0310LM , H7N0310LS , H7N0311LD , H7N0311LM , H7N0311LS .
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