H7N0308LM MOSFET Datasheet: N-Ch, 30V, 70A. Full specification with pinout and replacement list

H7N0308LM Specs and Replacement

Type Designator: H7N0308LM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 370 nS

Cossⓘ - Output Capacitance: 840 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: LDPAK

H7N0308LM substitution

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H7N0308LM datasheet

6.1. Size:107K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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7.2. Size:1500K cn vbsemi
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H7N0308CF www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004 at VGS = 10 V 98 30 82 nC 0.005 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220 FULLPAK D Server DC/DC G S S D G N-Channel MOSFET Top Vi... See More ⇒

Detailed specifications: H5N6001P , H7N0203AB , H7N0307AB , H7N0307LD , H7N0307LM , H7N0307LS , H7N0308AB , H7N0308LD , 4435 , H7N0308LS , H7N0310LD , H7N0310LM , H7N0310LS , H7N0311LD , H7N0311LM , H7N0311LS , H7N0312AB .