H7N0308LS MOSFET. Datasheet pdf. Equivalent
Type Designator: H7N0308LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 370 nS
Cossⓘ - Output Capacitance: 840 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: LDPAK
H7N0308LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H7N0308LS Datasheet (PDF)
rej03g1124 h7n0308ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1122 h7n0308abds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h7n0308cf.pdf
H7N0308CFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 10 V 9830 82 nC0.005 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220 FULLPAK D Server DC/DCGSSDGN-Channel MOSFETTop Vi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFH20N80P
History: IXFH20N80P
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