H7N0312LM Datasheet and Replacement
Type Designator: H7N0312LM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 1750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: LDPAK
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H7N0312LM Datasheet (PDF)
rej03g1128 h7n0312ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1127 h7n0312abds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1125 h7n0310ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1126 h7n0311ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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History: SI7194DP | FDB110N15A | AP2605GY0-HF | RU60C20R5 | STS3N95K3 | BUK7M4R3-40H | IRFI710A
Keywords - H7N0312LM MOSFET datasheet
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History: SI7194DP | FDB110N15A | AP2605GY0-HF | RU60C20R5 | STS3N95K3 | BUK7M4R3-40H | IRFI710A
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