H7N0401LM MOSFET. Datasheet pdf. Equivalent

   Type Designator: H7N0401LM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: LDPAK

H7N0401LM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

H7N0401LM Datasheet (PDF)

6.1. Size:114K renesas
rej03g1129 h7n0401ldlslmds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:104K renesas
rej03g1367 h7n0405ldlslmds.pdf