H7N0608LS Datasheet and Replacement
Type Designator: H7N0608LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: LDPAK
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H7N0608LS Datasheet (PDF)
rej03g0144 h7n0608ldlslm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0165 h7n0608fm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0143 h7n0608ab.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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History: RSR025P03TL | RJK1525DPF | AOI423 | AON6708 | HMS8N65K | HY1908M | FIR12N15LG
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History: RSR025P03TL | RJK1525DPF | AOI423 | AON6708 | HMS8N65K | HY1908M | FIR12N15LG
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