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H7N1005DS Spec and Replacement


   Type Designator: H7N1005DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DPAK

 H7N1005DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H7N1005DS Specs

 6.1. Size:133K  renesas
rej03g1736 h7n1005dldsds.pdf pdf_icon

H7N1005DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:139K  renesas
rej03g0391 h7n1005ldlslmds.pdf pdf_icon

H7N1005DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:88K  renesas
r07ds0209ej h7n1004fm.pdf pdf_icon

H7N1005DS

Preliminary Datasheet H7N1004FM R07DS0209EJ0200 (Previous REJ03G0073-0100) Silicon N-Channel MOSFET Rev.2.00 High-Speed Power Switching Dec 02, 2010 Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM ) 2 D 1. Gate 1 G 2. Drain 3. Sou... See More ⇒

 8.2. Size:131K  renesas
rej03g1482 h7n1004dldsds.pdf pdf_icon

H7N1005DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: H7N1004AB , H7N1004DL , H7N1004DS , H7N1004FM , H7N1004LD , H7N1004LM , H7N1004LS , H7N1005DL , AO3400A , H7N1005FM , H7N1005LD , H7N1005LM , H7N1005LS , H7N1009MD90TZ , H7P0601DL , H7P0601DS , H7P1002DL .

History: IRFE9210 | RJL5012DPP | IXTP24P085T | IXTP26P10T | MEM610 | F18N65 | 3N191

Keywords - H7N1005DS MOSFET specs

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