All MOSFET. H7P0601DS Datasheet

 

H7P0601DS MOSFET. Datasheet pdf. Equivalent

Type Designator: H7P0601DS

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37 nC

Rise Time (tr): 85 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: DPAK

H7P0601DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H7P0601DS Datasheet (PDF)

2.1. rej03g0044 h7p0601dlds.pdf Size:112K _renesas

H7P0601DS
H7P0601DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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