HAT1126RJ Datasheet. Specs and Replacement

Type Designator: HAT1126RJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOP8

HAT1126RJ substitution

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HAT1126RJ datasheet

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HAT1126RJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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HAT1126RJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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HAT1126RJ

HAT1128R Silicon P Channel Power MOS FET High Speed Power Switching Rev.3.00 Feb.17.2004 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.3.00, Feb.17.2005, page 1 of 8 HAT1128R Absolute Maximum Ratings (Ta =... See More ⇒

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Detailed specifications: HAT1096C, HAT1097R, HAT1097RJ, HAT1108C, HAT1110R, HAT1111C, HAT1123R, HAT1126R, 2N7000, HAT1146C, HAT1147C, HAT2016R, HAT2019R, HAT2020R, HAT2022R, HAT2024R, HAT2026R

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