HAT2103R Datasheet and Replacement
Type Designator: HAT2103R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOP8
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HAT2103R Datasheet (PDF)
rej03g0384 hat2105tds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0552ej hat2105r.pdf
Preliminary Datasheet HAT2105R R07DS0552EJ0200(Previous: REJ03G1369-0100)Silicon N Channel Power MOS FET Rev.2.00High Speed Power Switching Oct 11, 2011Features Low on-resistance RDS(on) = 1.6 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8
rej03g1188 hat2108rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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History: BL2N50-P | SI5403DC | IRF740APBF | IXTT26N50P | AP78T10GP | AON6938 | SSF3092G1
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History: BL2N50-P | SI5403DC | IRF740APBF | IXTT26N50P | AP78T10GP | AON6938 | SSF3092G1
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