HAT2105R MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAT2105R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOP8

HAT2105R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAT2105R Datasheet (PDF)

..1. Size:91K renesas
r07ds0552ej hat2105r.pdf

Preliminary Datasheet HAT2105R R07DS0552EJ0200(Previous: REJ03G1369-0100)Silicon N Channel Power MOS FET Rev.2.00High Speed Power Switching Oct 11, 2011Features Low on-resistance RDS(on) = 1.6 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C) Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

7.1. Size:101K renesas
rej03g0384 hat2105tds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:73K renesas
rej03g1188 hat2108rds.pdf