HAT2108R Datasheet. Specs and Replacement
Type Designator: HAT2108R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
HAT2108R substitution
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HAT2108R datasheet
rej03g1188 hat2108rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g0384 hat2105tds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
r07ds0552ej hat2105r.pdf
Preliminary Datasheet HAT2105R R07DS0552EJ0200 (Previous REJ03G1369-0100) Silicon N Channel Power MOS FET Rev.2.00 High Speed Power Switching Oct 11, 2011 Features Low on-resistance RDS(on) = 1.6 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25 C) Capable of 4 V gate drive High density mounting Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8... See More ⇒
Detailed specifications: HAT2089WP, HAT2092R, HAT2093R, HAT2096H, HAT2099H, HAT2103R, HAT2105R, HAT2105T, AON7506, HAT2114R, HAT2116H, HAT2118R, HAT2119H, HAT2129H, HAT2131R, HAT2132H, HAT2134H
Keywords - HAT2108R MOSFET specs
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