BUZ32 Specs and Replacement

Type Designator: BUZ32

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220M

BUZ32 substitution

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BUZ32 datasheet

 ..1. Size:282K  st
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BUZ32

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 ..2. Size:90K  infineon
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BUZ32

BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 9.5 Pulsed drain current IDpuls TC = 25 C 38 Avalanche current,limited by Tjmax IA... See More ⇒

 ..3. Size:230K  inchange semiconductor
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BUZ32

isc N-Channel Mosfet Transistor BUZ32 FEATURES 9.5A, 200V RDS(ON) = 0.400 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators,... See More ⇒

 0.1. Size:219K  siemens
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BUZ32

BUZ 326 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 27 C 10.5 Pulsed drain current IDpuls TC = 25 C 42 Avalanche current,limited by Tjmax ... See More ⇒

Detailed specifications: BUZ11, BUZ11A, BUZ11FI, BUZ20, BUZ21, BUZ23, BUZ24, BUZ25, IRF3710, BUZ35, BUZ36, BUZ41A, BUZ42, BUZ45, BUZ45A, BUZ46, BUZ50A

Keywords - BUZ32 MOSFET specs

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