BUZ32
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ32
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO220M
BUZ32
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ32
Datasheet (PDF)
..2. Size:90K infineon
buz32.pdf 
BUZ 32 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 32 200 V 9.5 A 0.4 TO-220 AB C67078-S1310-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA
..3. Size:230K inchange semiconductor
buz32.pdf
isc N-Channel Mosfet Transistor BUZ32FEATURES9.5A, 200VRDS(ON) = 0.400SOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,
0.1. Size:219K siemens
buz326.pdf
BUZ 326SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 326 400 V 10.5 A 0.5 TO-218 AA C67078-S3112-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 10.5Pulsed drain current IDpulsTC = 25 C 42Avalanche current,limited by Tjmax
0.2. Size:142K siemens
buz323.pdf
BUZ 323SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 323 400 V 15 A 0.3 TO-218 AA C67078-S3127-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 15Pulsed drain current IDpulsTC = 25 C 60Avalanche current,limited by Tjmax IAR
0.3. Size:366K siemens
buz325.pdf
SIPMOS Power Transistor BUZ 325 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 325 400 V 12.5 A 0.35 TO-218 AA C67078-S3118-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 27 C ID 12.5 APulsed drain current, TC =25C ID puls 50Avalanche current, limited by Tj max IAR 12.5Avalanche energy, per
0.4. Size:1225K infineon
buz32h3045a.pdf
BUZ 32 H3045A. Pb-free lead plating; RoHS compliant. Halogen-free according to IEC61249-2-21Pb-freePG-TO263-3BUZ32 H3045A YesRev. 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.2 2009-11-10BUZ 32 H3045ARev 2.22009-11-10BUZ 32 H3045A2009-11-10Rev 2.2BUZ 32 H3045A2009-11-10Rev 2.2BUZ32 H3045ARev 2.22009-11-10BUZ 32 H3045ARev
0.5. Size:402K infineon
buz32h.pdf
BUZ 32 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 32 H 200 V 9.5 A 0.4 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 29 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalan
0.6. Size:231K inchange semiconductor
buz326.pdf
isc N-Channel Mosfet Transistor BUZ326FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
0.7. Size:231K inchange semiconductor
buz325.pdf
isc N-Channel Mosfet Transistor BUZ325FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
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