2N6800 Datasheet and Replacement
Type Designator: 2N6800
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO205AF
2N6800 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6800 Datasheet (PDF)
2n6800 irff330.pdf
PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒
2n6796 2n6798 2n6800 2n6802.pdf
2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO... See More ⇒
2n6800.pdf
2N6800 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED ... See More ⇒
Datasheet: 2N6797-SM , 2N6798 , 2N6798JANTX , 2N6798JANTXV , 2N6798SM , 2N6799 , 2N6799LCC4 , 2N6799-SM , NCEP15T14 , 2N6800JANTX , 2N6800JANTXV , 2N6800SM , 2N6801 , 2N6801LCC4 , 2N6801-SM , 2N6802 , 2N6802JANTX .
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