All MOSFET. 2N6800 Datasheet

 

2N6800 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N6800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33(max) nC
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO205AF

 2N6800 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6800 Datasheet (PDF)

 ..1. Size:130K  international rectifier
2n6800 irff330.pdf

2N6800
2N6800

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 ..2. Size:66K  omnirel
2n6796 2n6798 2n6800 2n6802.pdf

2N6800
2N6800

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N68002N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,QUALIFIED TO MIL-PRF-19500/557100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/557DESCRIPTIO

 ..3. Size:24K  semelab
2n6800.pdf

2N6800
2N6800

2N6800SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED

 0.1. Size:96K  semelab
2n6800lcc4.pdf

2N6800
2N6800

2N6800LCC4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 9.14 (0.360)ENHANCEMENT MODE 1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 16HIGH VOLTAGE 1.39 (0.055)1.02 (0.040)POWER MOSFETS 11 1710 18 7.62 (0.300) 7.12 (0.280)9 10.76 (0.030)8 2 BV 400V0.51 (0.020) DSS0.33 (0.013) ID 3.0ARad.0.08 (0.003)7 6 5 4 3R 1.0

 0.2. Size:175K  microsemi
2n6800u.pdf

2N6800
2N6800

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6800 2N6800UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag

 9.1. Size:197K  international rectifier
2n6802u.pdf

2N6800
2N6800

PD - 91719BIRFE430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802UHEXFETTRANSISTORS JANTXV2N6802USURFACE MOUNT (LCC-18) [REF:MIL-PRF-19500/557]500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE430 500V 1.50 2.5ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfacemount technology. Desinged

 9.2. Size:149K  international rectifier
2n6804 irf9130.pdf

2N6800
2N6800

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 9.3. Size:149K  international rectifier
2n6806 irf9230.pdf

2N6800
2N6800

PD - 90548CIRF9230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806HEXFETTRANSISTORS JANTXV2N6806THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9230 -200V 0.80 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique p

 9.4. Size:129K  international rectifier
2n6802 irff430.pdf

2N6800
2N6800

PD -90433CIRFF430REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802HEXFETTRANSISTORS JANTXV2N6802THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF430 500V 1.5 2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.5. Size:99K  international rectifier
irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf

2N6800

Datasheet: 2N6797-SM , 2N6798 , 2N6798JANTX , 2N6798JANTXV , 2N6798SM , 2N6799 , 2N6799LCC4 , 2N6799-SM , 4N60 , 2N6800JANTX , 2N6800JANTXV , 2N6800SM , 2N6801 , 2N6801LCC4 , 2N6801-SM , 2N6802 , 2N6802JANTX .

 

 
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