HAT2268C MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAT2268C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: CMFPAK6

HAT2268C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAT2268C Datasheet (PDF)

0.1. Size:97K renesas
rej03g1354 hat2268cds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:43K renesas
hat2265h.pdf

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK54325 1D4G1, 2, 3 Source4 Gate5 DrainS S S1 2 3Rev.0.00, Sept.20

8.2. Size:105K renesas
rej03g1370 hat2266hds.pdf