HAT2280R MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAT2280R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 13.5 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SOP8

HAT2280R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAT2280R Datasheet (PDF)

..1. Size:98K renesas
hat2280r.pdf

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201Rev.2.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So

8.1. Size:96K renesas
rej03g1328 hat2281cds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:70K renesas
rej03g1470 hat2287wpds.pdf