All MOSFET. RJK0208DPA Datasheet

 

RJK0208DPA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJK0208DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: WPAK

 RJK0208DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK0208DPA Datasheet (PDF)

 0.1. Size:79K  renesas
 rej03g1924 rjk0208dpads.pdf

RJK0208DPA RJK0208DPA

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.1. Size:79K  renesas
 rej03g1923 rjk0206dpads.pdf

RJK0208DPA RJK0208DPA

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.2. Size:85K  renesas
 r07ds0238ej rjk0202dsp.pdf

RJK0208DPA RJK0208DPA

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

 8.3. Size:79K  renesas
 rej03g1922 rjk0204dpads.pdf

RJK0208DPA RJK0208DPA

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEU95P04

 

 
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