RJK0211DPA Datasheet. Specs and Replacement

Type Designator: RJK0211DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: WPAK

RJK0211DPA substitution

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RJK0211DPA datasheet

 ..1. Size:145K  renesas
r07ds0218ej rjk0211dpa.pdf pdf_icon

RJK0211DPA

Preliminary Datasheet RJK0211DPA R07DS0218EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN00... See More ⇒

 8.1. Size:126K  renesas
r07ds0219ej rjk0212dpa.pdf pdf_icon

RJK0211DPA

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

 8.2. Size:254K  renesas
r07ds0207ej rjk0215dpa.pdf pdf_icon

RJK0211DPA

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A... See More ⇒

 8.3. Size:127K  renesas
r07ds0217ej rjk0210dpa.pdf pdf_icon

RJK0211DPA

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN00... See More ⇒

Detailed specifications: RJJ0315DPA, RJJ0621DPP, RJJ1011DPD, RJK0202DSP, RJK0204DPA, RJK0206DPA, RJK0208DPA, RJK0210DPA, IRFP064N, RJK0212DPA, RJK0213DPA, RJK0214DPA, RJK0215DPA, RJK0216DPA, RJK0222DNS, RJK0223DNS, RJK0225DNS

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs