RJK0216DPA PDF and Equivalents Search

 

RJK0216DPA Specs and Replacement

Type Designator: RJK0216DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm

Package: WPAK

RJK0216DPA substitution

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RJK0216DPA datasheet

 ..1. Size:254K  renesas
 r07ds0208ej rjk0216dpa.pdf pdf_icon

RJK0216DPA

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A... See More ⇒

 8.1. Size:126K  renesas
 r07ds0219ej rjk0212dpa.pdf pdf_icon

RJK0216DPA

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

 8.2. Size:254K  renesas
 r07ds0207ej rjk0215dpa.pdf pdf_icon

RJK0216DPA

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A... See More ⇒

 8.3. Size:127K  renesas
 r07ds0217ej rjk0210dpa.pdf pdf_icon

RJK0216DPA

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN00... See More ⇒

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Detailed specifications: RJK0206DPA , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , IRF740 , RJK0222DNS , RJK0223DNS , RJK0225DNS , RJK0226DNS , RJK0230DPA , RJK0301DPB , RJK0301DPC , RJK0302DPB .

Keywords - RJK0216DPA MOSFET specs

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