All MOSFET. RJK0346DPA Datasheet

 

RJK0346DPA MOSFET. Datasheet pdf. Equivalent


   Type Designator: RJK0346DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: WPAK

 RJK0346DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK0346DPA Datasheet (PDF)

 0.1. Size:91K  renesas
rej03g1642 rjk0346dpads.pdf

RJK0346DPA
RJK0346DPA

Preliminary Datasheet RJK0346DPA REJ03G1642-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.1. Size:125K  renesas
rej03g1644 rjk0348dspds.pdf

RJK0346DPA
RJK0346DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:95K  renesas
rej03g1643 rjk0348dpads.pdf

RJK0346DPA
RJK0346DPA

Preliminary Datasheet RJK0348DPA REJ03G1643-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.3. Size:95K  renesas
rej03g1645 rjk0349dpads.pdf

RJK0346DPA
RJK0346DPA

Preliminary Datasheet RJK0349DPA REJ03G1645-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.4. Size:127K  renesas
rej03g1659 rjk0349dspds.pdf

RJK0346DPA
RJK0346DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSH8N90A | VBE1806

 

 
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