All MOSFET. RJK03B7DPA Datasheet

 

RJK03B7DPA Datasheet and Replacement


   Type Designator: RJK03B7DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: WPAK
 

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RJK03B7DPA Datasheet (PDF)

 0.1. Size:92K  renesas
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RJK03B7DPA

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

 8.1. Size:92K  renesas
 rej03g1790 rjk03b8dpads.pdf pdf_icon

RJK03B7DPA

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

 8.2. Size:93K  renesas
 rej03g1791 rjk03b9dpads.pdf pdf_icon

RJK03B7DPA

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320Silicon N Channel Power MOS FET Rev.3.20Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

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Datasheet: RJK0391DPA , RJK0392DPA , RJK0393DPA , RJK0394DPA , RJK0395DPA , RJK0396DPA , RJK0397DPA , RJK03A4DPA , TK10A60D , RJK03B8DPA , RJK03B9DPA , RJK03C0DPA , RJK03C1DPB , RJK03C2DPB , RJK03C5DPA , RJK03E0DNS , RJK03E1DNS .

Keywords - RJK03B7DPA MOSFET datasheet

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