RJK03B8DPA Datasheet and Replacement
Type Designator: RJK03B8DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.3 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
Package: WPAK
RJK03B8DPA substitution
RJK03B8DPA Datasheet (PDF)
rej03g1790 rjk03b8dpads.pdf

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
rej03g1789 rjk03b7dpads.pdf

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
rej03g1791 rjk03b9dpads.pdf

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320Silicon N Channel Power MOS FET Rev.3.20Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
Datasheet: RJK0392DPA , RJK0393DPA , RJK0394DPA , RJK0395DPA , RJK0396DPA , RJK0397DPA , RJK03A4DPA , RJK03B7DPA , IRFP450 , RJK03B9DPA , RJK03C0DPA , RJK03C1DPB , RJK03C2DPB , RJK03C5DPA , RJK03E0DNS , RJK03E1DNS , RJK03E2DNS .
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