RJK03B8DPA Datasheet. Specs and Replacement

Type Designator: RJK03B8DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: WPAK

RJK03B8DPA substitution

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RJK03B8DPA datasheet

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RJK03B8DPA

Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

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RJK03B8DPA

Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

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RJK03B8DPA

Preliminary Datasheet RJK03B9DPA REJ03G1791-0320 Silicon N Channel Power MOS FET Rev.3.20 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-... See More ⇒

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Detailed specifications: RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03A4DPA, RJK03B7DPA, AO4407, RJK03B9DPA, RJK03C0DPA, RJK03C1DPB, RJK03C2DPB, RJK03C5DPA, RJK03E0DNS, RJK03E1DNS, RJK03E2DNS

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