RJK03E1DNS Datasheet. Specs and Replacement

Type Designator: RJK03E1DNS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0069 Ohm

Package: HWSON8

RJK03E1DNS substitution

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RJK03E1DNS datasheet

 0.1. Size:140K  renesas
 rej03g1903 rjk03e1dnsds.pdf pdf_icon

RJK03E1DNS

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A ... See More ⇒

 8.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf pdf_icon

RJK03E1DNS

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA... See More ⇒

 8.2. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf pdf_icon

RJK03E1DNS

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.3. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf pdf_icon

RJK03E1DNS

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

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Detailed specifications: RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RJK03C0DPA, RJK03C1DPB, RJK03C2DPB, RJK03C5DPA, RJK03E0DNS, 5N60, RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.