RJK03E4DPA Datasheet. Specs and Replacement

Type Designator: RJK03E4DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: WPAK

RJK03E4DPA substitution

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RJK03E4DPA datasheet

 0.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf pdf_icon

RJK03E4DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA... See More ⇒

 8.1. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf pdf_icon

RJK03E4DPA

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.2. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf pdf_icon

RJK03E4DPA

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.3. Size:138K  renesas
 rej03g1905 rjk03e3dnsds.pdf pdf_icon

RJK03E4DPA

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A ... See More ⇒

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Detailed specifications: RJK03C0DPA, RJK03C1DPB, RJK03C2DPB, RJK03C5DPA, RJK03E0DNS, RJK03E1DNS, RJK03E2DNS, RJK03E3DNS, AO3407, RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA, RJK03F0DPA, RJK03F6DNS, RJK03F7DNS

Keywords - RJK03E4DPA MOSFET specs

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