RJK03E5DPA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK03E5DPA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039
Ohm
Package:
WPAK
RJK03E5DPA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK03E5DPA
Datasheet (PDF)
0.1. Size:105K renesas
rej03g1929 rjk03e5dpads.pdf 
Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
8.1. Size:106K renesas
rej03g1928 rjk03e4dpads.pdf
Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
8.2. Size:108K renesas
rej03g1933 rjk03e9dpads.pdf
Preliminary Datasheet RJK03E9DPA REJ03G1933-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
8.3. Size:118K renesas
rej03g1932 rjk03e8dpads.pdf
Preliminary Datasheet RJK03E8DPA REJ03G1932-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
8.4. Size:138K renesas
rej03g1905 rjk03e3dnsds.pdf
Preliminary Datasheet RJK03E3DNS REJ03G1905-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.5. Size:138K renesas
rej03g1902 rjk03e0dnsds.pdf
Preliminary Datasheet RJK03E0DNS REJ03G1902-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.6. Size:139K renesas
rej03g1904 rjk03e2dnsds.pdf
Preliminary Datasheet RJK03E2DNS REJ03G1904-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.7. Size:117K renesas
rej03g1931 rjk03e7dpads.pdf
Preliminary Datasheet RJK03E7DPA REJ03G1931-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
8.8. Size:140K renesas
rej03g1903 rjk03e1dnsds.pdf
Preliminary Datasheet RJK03E1DNS REJ03G1903-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.9. Size:95K renesas
rej03g1930 rjk03e6dpads.pdf
Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
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