RJK03E9DPA Datasheet. Specs and Replacement

Type Designator: RJK03E9DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: WPAK

RJK03E9DPA substitution

- MOSFET ⓘ Cross-Reference Search

 

RJK03E9DPA datasheet

 0.1. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf pdf_icon

RJK03E9DPA

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf pdf_icon

RJK03E9DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA... See More ⇒

 8.2. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf pdf_icon

RJK03E9DPA

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.3. Size:138K  renesas
 rej03g1905 rjk03e3dnsds.pdf pdf_icon

RJK03E9DPA

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A ... See More ⇒

SHOW MORE

Detailed specifications: RJK03E1DNS, RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, STF13NM60N, RJK03F0DPA, RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS, RJK03H1DPA, RJK0451DPB, RJK0452DPB

Keywords - RJK03E9DPA MOSFET specs

 RJK03E9DPA cross reference

 RJK03E9DPA equivalent finder

 RJK03E9DPA pdf lookup

 RJK03E9DPA substitution

 RJK03E9DPA replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.