All MOSFET. RJK0456DPB Datasheet

 

RJK0456DPB Datasheet and Replacement


   Type Designator: RJK0456DPB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: LFPAK
 

 RJK0456DPB substitution

   - MOSFET ⓘ Cross-Reference Search

 

RJK0456DPB Datasheet (PDF)

 0.1. Size:132K  renesas
rej03g1879 rjk0456dpbds.pdf pdf_icon

RJK0456DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:81K  renesas
r07ds0073ej rjk0451dpb.pdf pdf_icon

RJK0456DPB

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102(Previous: REJ03G1763-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

 8.2. Size:129K  renesas
rej03g1877 rjk0454dpbds.pdf pdf_icon

RJK0456DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:81K  renesas
r07ds0075ej rjk0453dpb.pdf pdf_icon

RJK0456DPB

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102(Previous: REJ03G1762-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Datasheet: RJK03F8DNS , RJK03F9DNS , RJK03H1DPA , RJK0451DPB , RJK0452DPB , RJK0453DPB , RJK0454DPB , RJK0455DPB , STP65NF06 , RJK0629DPE , RJK0629DPK , RJK0629DPN , RJK0651DPB , RJK0652DPB , RJK0653DPB , RJK0654DPB , RJK0655DPB .

History: AON6774 | CED3060 | MTP8P08 | IXTT10P50 | WMN36N60F2 | BRF4N65S | DMN601WK

Keywords - RJK0456DPB MOSFET datasheet

 RJK0456DPB cross reference
 RJK0456DPB equivalent finder
 RJK0456DPB lookup
 RJK0456DPB substitution
 RJK0456DPB replacement

 

 
Back to Top

 


 
.