RJK0629DPE MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK0629DPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00375 Ohm
   Package: LDPAK

RJK0629DPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK0629DPE Datasheet (PDF)

0.1. Size:126K renesas
rej03g1874 rjk0629dpeds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.1. Size:125K renesas
rej03g1873 rjk0629dpnds.pdf