RJK0652DPB MOSFET. Datasheet pdf. Equivalent

Preliminary Datasheet RJK0652DPB R07DS0077EJ0102(Previous: REJ03G1766-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Preliminary Datasheet RJK0657DPA R07DS0343EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

Preliminary Datasheet RJK0658DPA R07DS0344EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0651DPB R07DS0076EJ0102(Previous: REJ03G1765-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 11 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

Preliminary Datasheet RJK0653DPB R07DS0078EJ0102(Previous: REJ03G1760-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 3.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Preliminary Datasheet RJK0659DPA R07DS0345EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8