RJK0655DPB Datasheet. Specs and Replacement

Type Designator: RJK0655DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: LFPAK

RJK0655DPB substitution

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RJK0655DPB datasheet

 0.1. Size:180K  renesas
rej03g1881 rjk0655dpbds.pdf pdf_icon

RJK0655DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:116K  renesas
r07ds0343ej rjk0657dpa.pdf pdf_icon

RJK0655DPB

Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8... See More ⇒

 8.2. Size:81K  renesas
r07ds0077ej rjk0652dpb.pdf pdf_icon

RJK0655DPB

Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 (Previous REJ03G1766-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack... See More ⇒

 8.3. Size:135K  renesas
r07ds0344ej rjk0658dpa.pdf pdf_icon

RJK0655DPB

Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Silicon N Channel Power MOS FET Rev.1.00 Apr 06, 2011 Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-B (Package name WPAK(3)) 5 6 7 8... See More ⇒

Detailed specifications: RJK0456DPB, RJK0629DPE, RJK0629DPK, RJK0629DPN, RJK0651DPB, RJK0652DPB, RJK0653DPB, RJK0654DPB, RU7088R, RJK0656DPB, RJK0657DPA, RJK0658DPA, RJK0659DPA, RJK0660DPA, RJK0851DPB, RJK0852DPB, RJK0853DPB

Keywords - RJK0655DPB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.