RJK0660DPA Datasheet and Replacement

Preliminary Datasheet RJK0660DPA R07DS0346EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 4.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

Preliminary Datasheet RJK0631JPD R07DS0252EJ0300Silicon N Channel Power MOS FET Rev.3.00High Speed Power Switching Jul 24, 2013Features For Automotive application Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ AEC-Q101 compliant Outline RENESAS Package code: PRSS0004ZD-C(Package n

Preliminary Datasheet RJK0657DPA R07DS0343EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 14 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

Preliminary Datasheet RJK0652DPB R07DS0077EJ0102(Previous: REJ03G1766-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Preliminary Datasheet RJK0631JPR R07DS0879EJ030060 V - 30 A - N Channel Power MOS FET Rev.3.00Jul 24, 2013High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 m typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0003AD-A(Pac

Preliminary Datasheet RJK0658DPA R07DS0344EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

Preliminary Datasheet RJK0602DPN-E0 R07DS0653EJ0200N-Channel MOS FET Rev.2.0060 V, 100 A, 3.9 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4.

Preliminary Datasheet RJK0603DPN-E0 R07DS0654EJ0200N-Channel MOS FET Rev.2.0060 V, 80 A, 5.2 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4. D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

RJK0631JPE R07DS0341JJ0500NMOS FET Rev.5.00 2013.07.24 AEC-Q101 RDS(on) = 12 m typ. (4.5 V) Ciss = 1350 pF typ : PRSS0004AE-B( : LDPAK (S)-(

Preliminary Datasheet RJK0632JPD R07DS0342EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 11, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline RENESAS Package code: PRSS0004ZD-C(Package name:

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0636JPD R07DS0365EJ020060 V - 25 A - N Channel Power MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 18 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C(Pa

Preliminary Datasheet RJK0629JPE R07DS1075EJ010060 V - 85 A - Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 17, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 3.75 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 4100 pF typ Outline RENESAS Package code: PRSS0004AE-B

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet RJK0651DPB R07DS0076EJ0102(Previous: REJ03G1765-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 11 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa

Preliminary Datasheet RJK0653DPB R07DS0078EJ0102(Previous: REJ03G1760-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 3.8 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack

Preliminary Datasheet RJK0628JPE R07DS0336EJ020060 V - 160 A - N Channel MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B(Packa

Preliminary Datasheet RJK0630JPE R07DS0340EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 6.2 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 2100 pF typ. Outline RENESAS Package code: PRSS0004AE-B(Package name

Preliminary Datasheet RJK0659DPA R07DS0345EJ0100Silicon N Channel Power MOS FET Rev.1.00Apr 06, 2011Power Switching Features High speed switching Low drive current High density mounting Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-B(Package name: WPAK(3))5 6 7 8

Preliminary Datasheet RJK0601DPN-E0 R07DS0652EJ0200N-Channel MOS FET Rev.2.0060 V, 110 A, 3.1 m Aug 24, 2012Features High speed switching Low drive current Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A(Package name: TO-220AB)42, 4D1. Gate2. Drain1 G3. Source4.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

RJK0632JPDwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise