RJK0852DPB Datasheet. Specs and Replacement

Type Designator: RJK0852DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: LFPAK

RJK0852DPB substitution

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RJK0852DPB datasheet

 ..1. Size:81K  renesas
 r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0852DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102 (Previous REJ03G1774-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

 8.1. Size:180K  renesas
 rej03g1885 rjk0856dpbds.pdf pdf_icon

RJK0852DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:81K  renesas
 r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0852DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202 (Previous REJ03G1772-0201) Silicon N Channel Power MOS FET Rev.2.02 Power Switching Jul 30, 2010 Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag... See More ⇒

 8.3. Size:81K  renesas
 r07ds0079ej rjk0851dpb.pdf pdf_icon

RJK0852DPB

Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 (Previous REJ03G1773-0101) Silicon N Channel Power MOS FET Rev.1.02 Power Switching Jul 30, 2010 Functions High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 18 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack... See More ⇒

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Detailed specifications: RJK0654DPB, RJK0655DPB, RJK0656DPB, RJK0657DPA, RJK0658DPA, RJK0659DPA, RJK0660DPA, RJK0851DPB, IRF730, RJK0853DPB, RJK0854DPB, RJK0855DPB, RJK0856DPB, RJK1008DPE, RJK1008DPN, RJK1008DPP, RJK1021DPE

Keywords - RJK0852DPB MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.