2N6800JANTXV Datasheet: MOSFET, N-Ch, 400V, 3A. Full specification with pinout and replacement list

2N6800JANTXV Datasheet. Specs and Replacement

Type Designator: 2N6800JANTXV 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO205AF

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2N6800JANTXV substitution

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2N6800JANTXV datasheet

8.1. Size:130K international rectifier
2n6800 irff330.pdf pdf_icon

PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒

8.2. Size:66K omnirel
2n6796 2n6798 2n6800 2n6802.pdf pdf_icon

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO... See More ⇒

8.3. Size:24K semelab
2n6800.pdf pdf_icon

2N6800 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED ... See More ⇒

8.4. Size:96K semelab
2n6800lcc4.pdf pdf_icon