All MOSFET. RJK0854DPB Datasheet

 

RJK0854DPB Datasheet and Replacement


   Type Designator: RJK0854DPB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: LFPAK
 

 RJK0854DPB substitution

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RJK0854DPB Datasheet (PDF)

 0.1. Size:159K  renesas
rej03g1883 rjk0854dpbds.pdf pdf_icon

RJK0854DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:180K  renesas
rej03g1885 rjk0856dpbds.pdf pdf_icon

RJK0854DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:81K  renesas
r07ds0080ej rjk0852dpb.pdf pdf_icon

RJK0854DPB

Preliminary Datasheet RJK0852DPB R07DS0080EJ0102(Previous: REJ03G1774-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

 8.3. Size:81K  renesas
r07ds0081ej rjk0853dpb.pdf pdf_icon

RJK0854DPB

Preliminary Datasheet RJK0853DPB R07DS0081EJ0202(Previous: REJ03G1772-0201)Silicon N Channel Power MOS FET Rev.2.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 6.2 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packag

Datasheet: RJK0656DPB , RJK0657DPA , RJK0658DPA , RJK0659DPA , RJK0660DPA , RJK0851DPB , RJK0852DPB , RJK0853DPB , IRF3205 , RJK0855DPB , RJK0856DPB , RJK1008DPE , RJK1008DPN , RJK1008DPP , RJK1021DPE , RJK1021DPN , RJK1028DNS .

History: PE532DY | OSG60R1K8PF

Keywords - RJK0854DPB MOSFET datasheet

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