RJK1052DPB MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK1052DPB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: LFPAK
RJK1052DPB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK1052DPB Datasheet (PDF)
r07ds0083ej rjk1052dpb.pdf
Preliminary Datasheet RJK1052DPB R07DS0083EJ0102(Previous: REJ03G1769-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 15 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa
r07ds0093ej rjk1054dpb.pdf
Preliminary Datasheet RJK1054DPB R07DS0093EJ0200(Previous: REJ03G1886-0100)Silicon N Channel Power MOS FET Rev.2.00Power Switching Aug 17, 2010Features High speed switching Pb-free Low drive current Halogen-free Low on-resistance High density mounting RDS(on) = 17 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A(Pack
r07ds0082ej rjk1051dpb.pdf
Preliminary Datasheet RJK1051DPB R07DS0082EJ0102(Previous: REJ03G1768-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 30 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Package
rej03g1887 rjk1055dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1888 rjk1056dpbds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0084ej rjk1053dpb.pdf
Preliminary Datasheet RJK1053DPB R07DS0084EJ0102(Previous: REJ03G1770-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 10 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Packa
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SIHF840LCS | STP10NK80Z | STW12NA50
History: SIHF840LCS | STP10NK80Z | STW12NA50
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