All MOSFET. RJK1555DPA Datasheet

 

RJK1555DPA MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK1555DPA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 295 pF

Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm

Package: WPAK

RJK1555DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK1555DPA Datasheet (PDF)

0.1. rej03g1783 rjk1555dpads.pdf Size:115K _renesas

RJK1555DPA
RJK1555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. rej03g1759 rjk1557dpads.pdf Size:118K _renesas

RJK1555DPA
RJK1555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. rjk1525dpj.pdf Size:96K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200 Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C (Package name LDPAK(L)) (Package

9.2. rjk1576dpa.pdf Size:86K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1576DPA R07DS0855EJ0200 150V - 25A - MOS FET Rev.2.00 High Speed Power Switching Jan 10, 2013 Features  Low on-resistance RDS(on) = 0.046  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 8 6 7 5 4 1, 2,

 9.3. rjk1535dpf rjk1535dpj.pdf Size:99K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline LDPAK D 4 4 4 1. Gate 2. Drain G 1 3. Source 2 1 3 4. Drain 2 3 1 RJK1535DPE 2 3 RJK1535DPF S RJK1535DPJ Absolute Maximu

9.4. r07ds0270ej rjk1560dpp.pdf Size:81K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1560DPP-M0 R07DS0270EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Mar 07, 2011 Features  Capable of 2.5 V gate drive  Low on-resistance RDS(on) = 0.043  typ. (at ID = 10 A, VGS = 4 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)

 9.5. rej03g0479 rjk1535dpj.pdf Size:101K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1535DPJ, RJK1535DPE, RJK1535DPF REJ03G0479-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline LDPAK D 4 4 4 1. Gate 2. Drain G 1 3. Source 2 1 3 4. Drain 2 3 1 RJK1535DPE 2 3 RJK1535DPF S RJK1535DPJ Absolute Maximu

9.6. rjk1525dpp-m0.pdf Size:83K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1525DPP-M0 R07DS0966EJ0100 150V - 17A - MOS FET Rev.1.00 High Speed Power Switching Nov 20, 2012 Features  Low on-resistance RDS(on) = 0.089  typ. (at ID = 8.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain G 3. Source

9.7. rej03g1889 rjk1562djeds.pdf Size:230K _renesas

RJK1555DPA
RJK1555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.8. rej03g0623 rjk1525dpj.pdf Size:98K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200 Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B RENESAS Package code: PRSS0004AE-C (Package name LDPAK(L)) (Package

9.9. rej03g1612 rjk1536dpeds.pdf Size:80K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1536DPE REJ03G1612-0300 N-Channel Power MOSFET Rev.3.00 High-Speed Switching Use Jun 30, 2010 Features  VDSS : 150 V  RDS(on) : 30 m (Max)  ID : 50 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1. Gate 2. Drain 3. Source 1 G 4. Drain 1 2 3 S 3 Application  Motor control, Lighting

9.10. rej03g1859 rjk1526dpjds.pdf Size:133K _renesas

RJK1555DPA
RJK1555DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.11. rej03g1594 rjk1536dpnds.pdf Size:79K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1536DPN REJ03G1594-0300 N-Channel Power MOSFET Rev.3.00 High-Speed Switching Use Jun 30, 2010 Features  VDSS : 150 V  RDS(on) : 30 m (Max)  ID : 50 A Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 4 2, 4 D 1. Gate 2. Drain 1 G 3. Source 4. Drain 1 2 3 S 3 Application  Motor control, Solenoid cont

9.12. rej03g0510 rjk1529dpk.pdf Size:86K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1529DPK REJ03G0510-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item

9.13. rjk1590dp3-a0.pdf Size:160K _renesas

RJK1555DPA
RJK1555DPA

 Data Sheet RJK1590DP3-A0 R07DS1255EJ0100 150 V - 1 A - MOS FET Rev.1.00 Mar 30, 2015 High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance R = 1.5  typ. (at V = 4 V) DS (on) GS Outline RENESAS Package code: PRSP0004ZB-A D (Package name: SOT-223) 4 1. Gate G 2. Drain 3 3. Source 2 4. Drain 1 S Absol

9.14. rjk1575dpa.pdf Size:87K _renesas

RJK1555DPA
RJK1555DPA

 Preliminary Datasheet RJK1575DPA R07DS0858EJ0200 150V - 25A - MOS FET Rev.2.00 High Speed Power Switching Jan 08, 2013 Features  Very low on-resistance RDS(on) = 0.038  typ. (at ID = 12.5 A, VGS = 10 V, Ta = 25 C)  Low gate charge Qg = 37 nC typ. (at VDD = 120 V, VGS = 10 V, ID = 25 A, Ta = 25 C)  Low leakage current  High speed switching Outline

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