All MOSFET. RJK2009DPM Datasheet

 

RJK2009DPM MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK2009DPM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 40 A

Total Gate Charge (Qg): 72 nC

Maximum Drain-Source On-State Resistance (Rds): 0.029 Ohm

Package: TO3PFM

RJK2009DPM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK2009DPM Datasheet (PDF)

0.1. rej03g0474 rjk2009dpm.pdf Size:86K _renesas

RJK2009DPM
RJK2009DPM

 Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features  Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

8.1. rej03g0512 rjk2006dpj.pdf Size:238K _renesas

RJK2009DPM
RJK2009DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. rjk2006dpe.pdf Size:262K _inchange_semiconductor

RJK2009DPM
RJK2009DPM

Isc N-Channel MOSFET Transistor RJK2006DPE ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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