RJK2009DPM Spec and Replacement
Type Designator: RJK2009DPM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Id| ⓘ - Maximum Drain Current: 40
A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029
Ohm
Package:
TO3PFM
RJK2009DPM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK2009DPM Specs
..1. Size:86K renesas
rej03g0474 rjk2009dpm.pdf 
Preliminary Datasheet RJK2009DPM REJ03G0474-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol ... See More ⇒
8.1. Size:238K renesas
rej03g0512 rjk2006dpj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.2. Size:262K inchange semiconductor
rjk2006dpe.pdf 
Isc N-Channel MOSFET Transistor RJK2006DPE FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒
9.1. Size:115K renesas
rej03g1761 rjk2057dpads.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.2. Size:102K renesas
rej03g1868 rjk2054dpcds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.3. Size:87K renesas
rjk2075dpa.pdf 
Preliminary Datasheet RJK2075DPA R07DS0856EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 10, 2013 Features Low on-resistance RDS(on) = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PWSN0008DE-A (Package name WPAK(3F)) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3... See More ⇒
9.4. Size:99K renesas
r07ds0416ej rjk2017dpp.pdf 
Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 (Previous REJ03G1797-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 07, 2011 Features Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AB-A (Package name TO-220FN) D 1.... See More ⇒
9.5. Size:117K renesas
rej03g1735 rjk2055dpads.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.6. Size:87K renesas
rjk2076dpa.pdf 
Preliminary Datasheet RJK2076DPA R07DS0859EJ0200 200V - 20A - MOS FET Rev.2.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.068 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25 C) Low leakage current High speed switching Outline REN... See More ⇒
9.7. Size:85K renesas
rjk2062jpk.pdf 
Preliminary Datasheet RJK2062JPK R07DS0488EJ0100 200 V - 80 A - N Channel Power MOS FET Rev.1.00 High Speed Power Switching Sep 19, 2012 Features For Automotive applications AEC-Q101 compliant Low on-resistance RDS(on) = 17 m typ. Low input capacitance Ciss = 6800 pF typ Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) 2, 4 4 D... See More ⇒
9.8. Size:117K renesas
rjk2061jpe.pdf 
Preliminary Datasheet RJK2061JPE R07DS0369EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching May 12, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 55 m typ. Low input capacitance Ciss = 1850 pF typ Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) 2, 4 D 4 1. Gate ... See More ⇒
9.9. Size:121K renesas
rej03g1589 rjk2017dpeds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: RJK1536DPN
, RJK1555DPA
, RJK1557DPA
, RJK1560DPP-M0
, RJK1562DJE
, RJK2006DPE
, RJK2006DPF
, RJK2006DPJ
, IRFP260
, RJK2017DPE
, RJK2017DPP
, RJK2054DPC
, RJK2055DPA
, RJK2057DPA
, RJK2508DPK
, RJK2511DPK
, RJK2555DPA
.
Keywords - RJK2009DPM MOSFET specs
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