All MOSFET. RJK2055DPA Datasheet

 

RJK2055DPA MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK2055DPA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 245 pF

Maximum Drain-Source On-State Resistance (Rds): 0.069 Ohm

Package: WPAK

RJK2055DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RJK2055DPA Datasheet (PDF)

0.1. rej03g1735 rjk2055dpads.pdf Size:117K _renesas

RJK2055DPA
RJK2055DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. rej03g1868 rjk2054dpcds.pdf Size:102K _renesas

RJK2055DPA
RJK2055DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. rej03g1761 rjk2057dpads.pdf Size:115K _renesas

RJK2055DPA
RJK2055DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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