RJK2511DPK Datasheet. Specs and Replacement

Type Designator: RJK2511DPK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO3P

RJK2511DPK substitution

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RJK2511DPK datasheet

 0.1. Size:85K  renesas
rej03g1486 rjk2511dpkds.pdf pdf_icon

RJK2511DPK

Preliminary Datasheet RJK2511DPK REJ03G1486-0500 Silicon N Channel MOS FET Rev.5.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25 C) Item S... See More ⇒

 9.1. Size:115K  renesas
rej03g1776 rjk2555dpads.pdf pdf_icon

RJK2511DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:87K  renesas
rej03g0508 rjk2508dpk.pdf pdf_icon

RJK2511DPK

Preliminary Datasheet RJK2508DPK REJ03G0508-0300 Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline PRSS0004ZE-A (Previous code TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit ... See More ⇒

 9.3. Size:115K  renesas
rej03g1777 rjk2557dpads.pdf pdf_icon

RJK2511DPK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: RJK2006DPJ, RJK2009DPM, RJK2017DPE, RJK2017DPP, RJK2054DPC, RJK2055DPA, RJK2057DPA, RJK2508DPK, 12N60, RJK2555DPA, RJK2557DPA, RJK3008DPK, RJK4002DPP-M0, RJK4006DPD, RJK4006DPP-M0, RJK4007DPP-M0, RJK4012DPE

Keywords - RJK2511DPK MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs